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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor MJE700T description isc website www.iscsemi.cn collector?emitter breakdown voltage : v (br)ceo =-60 v dc current gain : h fe = 750(min) @ i c =-1.5a complement to type mje800t applications designed for general-purpose amplifier and low-speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continuous -4 a i b b base current -0.1 a p c collector power dissipation t c =25 50 w t i junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w
inchange semiconductor isc product specification isc silicon pnp darlington power transistor MJE700T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b = 0 -60 v v ce (sat)-1 collector-emitter saturation voltage i c =-1.5a; i b =-40ma -2.5 v v ce (sat)-2 collector-emitter saturation voltage i c =-4a; i b =-40ma -3.0 v v be (on)-1 base-emitter on voltage i c =-1.5a ; v ce =-3v -2.5 v v be (on)-2 base-emitter on voltage i c =-4a ; v ce =-3v -3.0 v i ceo collector cutoff current v ce =-60v ; i b = 0 b -0.1 ma i cbo collector cutoff current v cb =-60v ; i e = 0 v cb =-60v ; i e = 0;t c = 100 -0.1 -0.5 ma i ebo emitter cutoff current v eb =-5v; i c = 0 -2.0 ma h fe-1 dc current gain i c =-1.5a ; v ce =-3v 750 h fe-2 dc current gain i c =-4a ; v ce =-3v 100 isc website www.iscsemi.cn |
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